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Alzheimer's disease (AD) has been consistently related to the formation of senile amyloid plaques mainly composed of amyloid β (Aβ) peptides. The toxicity of Aβ aggregates has been indicated to be responsible for AD pathology. One scenario to decrease Aβ toxicity is the development of effective inhibitors against Aβ amyloid formation. In this study, we investigate the effect of gallium nitride nanoparticles (GaN NPs) as inhibitors of Aβ40 amyloid formation using a combination of biophysical approaches. Our results show that the lag phase of Aβ40 aggregation kinetics is significantly retarded by GaN NPs in a concentration dependent manner, implying the activity of GaN NPs in interfering with the formation of the crucial nucleus during Aβ aggregation. Our results also show that GaN NPs can reduce the amyloid fibril elongation rate in the course of the aggregation kinetics. It is speculated that the high polarization characteristics of GaN NPs may provoke a strong interaction between the particles and Aβ40 peptide and in this way decrease self-association of the peptide monomers to form amyloids. 

Abstract A poly(triaryl amine) thin film field effect transistor was investigated in air with ionic liquid (IL) gating for the first time. The transistor retained a high‐on/off ratio of ~700 and mobility of ~10⁻²cm²/V‐s. When compared to a transistor based on the conducting polymer polyaniline under similar operating conditions, it was found to exhibit superior performance. Significantly low‐operating voltages (±1 V) enhances the possibility of its use in organic electronics. The device was successfully tested for binary operation, and we demonstrate its suitability for use in low‐power consumption electronic circuits.